가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIR472ADP-T1-GE3CT-ND | 6,497 | 1 | Cut Tape | ||||||||
| TTI | SIR472ADP-T1-GE3 | 0 | 6K | Tape & Reel | 14h | |||||||
| Avnet | SIR472ADP-T1-GE3 | 0 | 6K | 13h | ||||||||
| TTI Asia | SIR472ADP-T1-GE3 | 문의하기 | 15h | |||||||||
| Microchip USA | SIR472ADP-T1-GE3 | 222 | 3K | Tray | 4h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2013-10-16
Lifecycle StatusNRND (Last Updated: 4 months ago)
관련 부품
VishaySIS472DN-T1-GE3
Power Field-Effect Transistor, 20A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
설명
유통업체에서 제공한 Vishay SIR472ADP-T1-GE3에 대한 설명입니다.
Trans MOSFET N-CH Si 30V 14.2A 8-Pin PowerPAK SO EP
Power Field-Effect Transistor, 18A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 30V .0090ohm@10V 18A N-Ch T-FET
TRANS MOSFET N-CH 30V 18A PWRPAK SO-8
N-Ch PowerPAK SO-8 CU 30V 9mohm@10V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
MountSurface Mount
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.04 nF
Max Operating Temperature150 °C
Max Power Dissipation14.7 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max9 mΩ
Resistance9 mΩ
Rise Time45 ns
Turn-Off Delay Time16 ns
Turn-On Delay Time16 ns