가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHW30N60E-GE3-ND | 145 | 1 | Tube | ||||||||
| Avnet | SIHW30N60E-GE3 | 0 | 480 | 4h | ||||||||
| TTI Europe | SIHW30N60E-GE3 | 0 | 480 | Tube | 5h | |||||||
| Farnell | SIHW30N60E-GE3 | 0 | 1 | 1h | ||||||||
| Mouser | 78-SIHW30N60E-GE3 | 440 | 1 | Bulk |
관련 부품
VishaySIHW33N60E-GE3
MOSFET, N CH, 600V, 33A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG30N60E-GE3
MOSFET, N CH, 600V, 29A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
VishaySIHG30N60E-E3
MOSFET, N CH, 600V, 29A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
STMicroelectronicsSTW45N60DM2AG
MOSFET N-CH 600V 34A TO247 / N-Channel 600 V 34A (Tc) 250W (Tc) Through Hole TO-247-3
STMicroelectronicsSTW40N60M2
N-channel 600 V, 0.078 Ohm typ., 34 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Vishay SIHW30N60E-GE3에 대한 설명입니다.
MOSFET, N CH, 600V, 29A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-247AD
MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
250W(Tc) 20V 4V@ 250¦ÌA 130nC@ 10 V 1N 600V 125m¦¸@ 15A,10V 29A 2.6nF@100V TO-247AD 15.87mm*5.31mm*20.82mm
Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
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- Vishay Intertechnology
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- Vishay Semiconductors
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
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- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)29 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance125 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time75 ns
Gate to Source Voltage (Vgs)4 V
Input Capacitance2.6 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Rds On Max125 mΩ
Rise Time65 ns
Threshold Voltage2 V
Turn-Off Delay Time95 ns
Turn-On Delay Time40 ns