가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SIHF12N65E-GE3-ND | 818 | 1 | Tube | ||||||||
| TTI | SIHF12N65E-GE3 | 1,000 | 50 | Tube | 1d | |||||||
| TME | SIHF12N65E-GE3 | 0 | 1 | 6h | ||||||||
| Future Electronics | SIHF12N65E-GE3 | 0 | 1K | Tube | ||||||||
| Avnet | SIHF12N65E-GE3 | 0 | 1K | 16h |
관련 부품
STMicroelectronicsSTF18NM60N
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTF15NM65N
N-channel 650 V, 0.35 Ohm typ., 12 A MDmesh II Power MOSFET in TO-220FP package
STMicroelectronicsSTF15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Vishay SIHF12N65E-GE3에 대한 설명입니다.
E Series N Channel 650 V 380 mO 70 nC Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 650V 12A 3-Pin(3+Tab) TO-220 Full-Pak
Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET 650V 392Ohm@10V 12A N-Ch E-SRS
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)12 A
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.224 nF
Max Operating Temperature150 °C
Max Power Dissipation33 W
Min Breakdown Voltage650 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation33 W
Rds On Max380 mΩ
Rise Time19 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time16 ns