공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-12-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
관련 부품
VishaySIHB23N60E-GE3
MOSFET N-CH 600V 23A D2PAK / N-Channel 600 V 23A (Tc) 227W (Tc) Surface Mount D²PAK (TO-263)
STMicroelectronicsSTB27NM60ND
N-channel 600 V, 0.13 Ohm, 21 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK
STMicroelectronicsSTB28NM60ND
N-channel 600 V, 0.120 Ohm typ., 24 A FDmesh(TM) II Power MOSFET (with fast diode) in D2PAK package
InfineonIPB60R160P6ATMA1
Mosfet, N-Ch, 600V, 23.8A, To-263-3 Rohs Compliant: Yes |Infineon Technologies IPB60R160P6ATMA1
설명
유통업체에서 제공한 Vishay SIHB22N60S-E3에 대한 설명입니다.
S-Series N-Ch 650 V 0.19 Ohm Surface Mount High Voltage Power Mosfet - D2PAK-3
Trans MOSFET N-CH 600V 22A 3-Pin(2+Tab) D2PAK
POWER MOSFET Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 600V, 22A, TO263; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:600V; On Resistance Rds(on):160mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:250W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Power Dissipation Pd:250W; Voltage Vgs Max:20V
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기술 사양
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance190 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time59 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.81 nF
Max Operating Temperature150 °C
Max Power Dissipation250 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max190 mΩ
Resistance190 mΩ
Rise Time68 ns
Threshold Voltage2 V
Turn-Off Delay Time77 ns
Turn-On Delay Time24 ns