가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SIDR626LDP-T1-RE3 | 18,000 | 3K | 2d | ||||||||
| Newark | SIDR626LDP-T1-RE3 | 2,950 | 1 | |||||||||
| Future Electronics | SIDR626LDP-T1-RE3 | 12,000 | 3K | Tape & Reel | ||||||||
| DigiKey | 742-SIDR626LDP-T1-RE3CT-ND | 7,727 | 1 | Cut Tape | ||||||||
| TME | SIDR626LDP-T1-RE3 | 0 | 3K | 7h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2025-10-12
Lifecycle StatusProduction (Last Updated: 2 months ago)
설명
유통업체에서 제공한 Vishay SIDR626LDP-T1-RE3에 대한 설명입니다.
N-Channel 60 V 45.6 A 125W 1.5mOhm Surface Mount Mosfet - PowerPAKSO-8DC
Trans MOSFET N-CH 60V 204A 8-Pin PowerPAK SO-DC EP T/R
N-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: YES
Vishay NMOS, Vds=60 V, 204 A, powerpak so - 8DC, , 8
Vishay MOSFET SiDR626LDP-T1-RE3
场效应管,N-通道 60-V (D-S) 场效应管, MOSFET;
MOSFET N-CH 60V 45.6A/2.4A PPAK
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Technical
Continuous Drain Current (ID)45.6 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance1.2 mΩ
Drain to Source Voltage (Vdss)60 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Number of Channels1
Power Dissipation6.25 W
Schedule B8541290080
Turn-Off Delay Time45 ns
Turn-On Delay Time17 ns
Dimensions
Height610 µm