가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | SIA483DJ-T1-GE3 | 2,385 | 1 | |||||||||
| Verical | SIA483DJ-T1-GE3 | 2,385 | 11 | |||||||||
| TME | SIA483DJ-T1-GE3 | 1,947 | 1 | 2h | ||||||||
| DigiKey | SIA483DJ-T1-GE3CT-ND | 115,489 | 1 | Cut Tape | ||||||||
| TTI | SIA483DJ-T1-GE3 | 0 | 3K | Tape & Reel | 5h |
관련 부품
VishaySIA400EDJ-T1-GE3
Single N-Channel 30 V 0.025 Ohm 17.4 nC 3.5 W Silicon Mosfet - POWERPAK-SC-70-6L
VishaySIA449DJ-T1-GE3
Single P-Channel 30 V 0.038 Ohm 35 nC 3.5 W Silicon Mosfet - POWERPAK-SC-70-6L
설명
유통업체에서 제공한 Vishay SIA483DJ-T1-GE3에 대한 설명입니다.
Single P-Channel 30 V 3.5 W 45 nC Silicon SMT Mosfet - POWERPAK-SC-70-6L
P-Channel 30-V (D-S) Mosfet Rohs Compliant: Yes |Vishay SIA483DJ-T1-GE3
Trans MOSFET P-CH 30V 10A 6-Pin PowerPAK SC-70 EP T/R
30V 12A 19W 21mΩ@10V,5A P Channel PowerPAK-SC-70-6 MOSFETs ROHS
Power Field-Effect Transistor, 12A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
SINGLE P-CH PPAK SC-70 COPPER 30V 30 MOHM @ 4.5V
MOSFET P-CH 30V 12A PPAK SC70-6
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
MountSurface Mount
Number of Pins6
Number of Terminals3
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance21 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.55 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation19 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation3.5 W
Rds On Max21 mΩ
Rise Time60 ns
Schedule B8541290080
Turn-Off Delay Time27 ns
Turn-On Delay Time10 ns
Dimensions
Height800 µm
Length2.05 mm
Width2.05 mm