가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI7108DN-T1-E3 | 3,000 | 1 | Cut Tape | ||||||||
| Verical | SI7108DN-T1-E3 | 21,000 | 3K | |||||||||
| Arrow Electronics | SI7108DN-T1-E3 | 21,000 | 3K | |||||||||
| DigiKey | SI7108DN-T1-E3CT-ND | 10,762 | 1 | Cut Tape | ||||||||
| TTI | SI7108DN-T1-E3 | 12,000 | 3K | Tape & Reel | 8h |
관련 부품
설명
유통업체에서 제공한 Vishay SI7108DN-T1-E3에 대한 설명입니다.
Single N-Channel 20 V 4.9 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
Trans MOSFET N-CH 20V 14A 8-Pin PowerPAK 1212 T/R
1.5W(Ta) 16V 2V@ 250¦ÌA 30nC@ 4.5 V 1N 20V 4.9m¦¸@ 22A,10V 14A 1212
N-CH 20-V (D-S) FAST SWITCHING MOSFET
Power Field-Effect Transistor, 14A I(D), 20V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N-Channel MOSFETs 20V 22A 0.0049Ohm
N CHANNEL MOSFET, 20V, 22A POWERPAK; Tra; N CHANNEL MOSFET, 20V, 22A POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:22A; Drain Source Voltage Vds:20V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V
Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:22A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V; Power Dissipation:800Mw; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI7108DN-T1-E3.
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기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance4.9 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)16 V
Max Operating Temperature150 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Rds On Max4.9 mΩ
Resistance4.9 mΩ
Rise Time10 ns
Schedule B8541290080
Turn-Off Delay Time60 ns
Turn-On Delay Time10 ns
Dimensions
Height1.04 mm
Length3.05 mm
Width3.05 mm