가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | SI7106DN-T1-E3 | 3,000 | 3K | 2d | ||||||||
| Newark | SI7106DN-T1-E3 | 3,000 | 1 | Cut Tape | ||||||||
| DigiKey | SI7106DN-T1-E3CT-ND | 27,414 | 1 | Cut Tape | ||||||||
| TTI | SI7106DN-T1-E3 | 9,000 | 3K | Tape & Reel | 1d | |||||||
| TME | SI7106DN-T1-E3 | 0 | 3K | 16h |
대체 부품
Price @ 1000
$ 1.03
$ 1.076
Stock
797,114
205,326
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
-
-
Drain to Source Voltage (Vdss)
20 V
20 V
Continuous Drain Current (ID)
12.5 A
12.5 A
Threshold Voltage
1.5 V
-
Rds On Max
6.2 mΩ
6.2 mΩ
Gate to Source Voltage (Vgs)
12 V
12 V
Power Dissipation
1.5 W
1.5 W
Input Capacitance
-
-
관련 부품
VishaySI7629DN-T1-GE3
Single P-Channel 20 V 4.6 mOhm SMT TrenchFET Power Mosfet - PowerPAK 1212-8
InfineonIRF7425PBF
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 8.2 Milliohms;ID -15A;SO-8;PD 2.5W;VGS +/-1
설명
유통업체에서 제공한 Vishay SI7106DN-T1-E3에 대한 설명입니다.
Single N-Channel 20 V 6.2 mOhms Surface Mount Power Mosfet - PowerPAK 1212-8
SI7106DN-T1-E3 N-CHANNEL MOSFET TRANSISTOR, 12.5 A, 20 V, 8-PIN POWERPAK 1212
N-CHANNEL 20-V (D-S) FAST SWITCHING MOSFET Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CH MOSFET, 20V, 19.5A, POWERPAK; Trans; N CH MOSFET, 20V, 19.5A, POWERPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:19.5A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9.8mohm; Rds(on) Test Voltage Vgs:12V; Threshold Voltage Vgs Typ:1.5V
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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- Vishay Intertechnologies
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- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
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- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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- Vishay Semiconductor Diodes Division
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기술 사양
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Technical
Continuous Drain Current (ID)12.5 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance6.2 mΩ
Drain to Source Voltage (Vdss)20 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Rds On Max6.2 mΩ
Resistance6.2 mΩ
Rise Time15 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time50 ns
Turn-On Delay Time25 ns
Dimensions
Height1.04 mm
Length3.3 mm
Width3.3 mm