관련 부품
onsemiECH8675-TL-H
Tape & Reel (TR) Surface Mount 2P-Channel (Dual) 8 Mosfet Array 7.3nC @ 4.5V 4.5A 1.5W 63ns
VishaySI5935CDC-T1-GE3
SI5935CDC-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR,3.8 A,20V,8-PIN 1206 CHIPFET
설명
유통업체에서 제공한 Vishay SI5515CDC-T1-E3에 대한 설명입니다.
Dual N/P-Channel 20 V 2.1/1.3 W 11.3/11 nC Silicon SMT Mosfet - 1206-8 ChipFET
Transistor MOSFET Array N-CH/P-CH 20V 4A 8-Pin Chip FET T/R
Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:8-1206; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
DUAL N/P CHANNEL MOSFET, 20V, 1206; Tran; DUAL N/P CHANNEL MOSFET, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:4A; Continuous Drain Current Id, P Channel:-3.1A; Drain Source Voltage Vds, N Channel:20V
MOSFET, NP CH, 20V, 1206; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.03ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:800mV; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:1206; No. of Pins:8
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기술 사양
Physical
Case/PackageSMD/SMT
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)4 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance36 mΩ
Drain to Source Voltage (Vdss)20 V
Fall Time6 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance632 pF
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs800 mV
Number of Channels2
Number of Elements2
Power Dissipation1.3 W
Rds On Max36 mΩ
Rise Time32 ns
Threshold Voltage800 mV
Turn-Off Delay Time25 ns
Turn-On Delay Time10 ns
Dimensions
Height1.1 mm
Length3.05 mm
Width1.65 mm