가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Rutronik | LVMOS1544 | 5,000 | 2500 | 21h | ||||||||
| DigiKey | SI4554DY-T1-GE3CT-ND | 5,408 | 1 | Cut Tape | ||||||||
| TME | SI4554DY-T1-GE3 | 0 | 1 | 4h | ||||||||
| TTI | SI4554DY-T1-GE3 | 0 | 2500 | Tape & Reel | 16h | |||||||
| Future Electronics | SI4554DY-T1-GE3 | 0 | 2500 | Tape & Reel |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
Diodes Inc.DMN3024LSD-13
Mosfet, Dual, N-Ch, 30V, 6.8A Rohs Compliant: Yes |Diodes Inc. DMN3024LSD-13
Diodes Inc.DMN3024LSS-13
1.6W(Ta) 20V 3V@ 250¦ÌA 12.9nC@ 10 V 1N 30V 24m¦¸@ 7A,10V 6.4A 608pF@15V SOIC-8
STMicroelectronicsSTS8DNF3LL
Dual N-channel 30 V, 0.017 Ohm typ., 8 A STripFET(TM) II Power MOSFET in a SO-8 package
InfineonIRF9410TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.03Ohm;ID 7A;SO-8;PD 2.5W;VGS +/-20V;gFS 14
설명
유통업체에서 제공한 Vishay SI4554DY-T1-GE3에 대한 설명입니다.
Trans MOSFET N/P-CH 40V 6.8A/6.6A 8-Pin SOIC N T/R / MOSFET N/P-CH 40V 8A 8SO
VISHAY SI4554DY-T1-GE3 Dual MOSFET, N and P Channel, 8 A, 40 V, 0.02 ohm, 10 V, 1 V
Small Signal Field-Effect Transistor, 8A I(D), 40V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET, N/P-CH, 40V, 8-SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.02ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.2W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageSO
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight506.605978 mg
Technical
Continuous Drain Current (ID)8 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance24 mΩ
Drain to Source Voltage (Vdss)40 V
Fall Time18 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance690 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation3.2 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
Power Dissipation2 W
Rds On Max24 mΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage1 V
Turn-Off Delay Time40 ns
Turn-On Delay Time42 ns
Dimensions
Height1.75 mm
Length5 mm
Width4 mm