공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-09-15
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-06-30
LTD Date2006-09-30
설명
유통업체에서 제공한 Vishay SI4466DY에 대한 설명입니다.
Power Field-Effect Transistor, 13.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
N-Channel MOSFETs 20V 13.2A 2.5W
MOSFET, N, SO-8; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:20V; Current, Id Cont:13.2A; On State Resistance:0.009ohm; Voltage, Vgs Rds on Measurement:2.5V; Voltage, Vgs th Typ:1V; Case Style:SOIC; Termination ;RoHS Compliant: Yes
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:13.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.5A; N-channel Gate Charge:50nC; No. of Transistors:1; On State Resistance @ Vgs = 2.5V:13mohm; On State Resistance @ Vgs = 4.5V:9mohm; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:1.5W; Pulse Current Idm:50A; SMD Marking:SI4466DY; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:2.5V
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기술 사양
Physical
Case/PackageSO
Number of Pins8
Number of Terminals8
Weight84.99187 mg
Technical
Continuous Drain Current (ID)9.5 A
Drain to Source Resistance9 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)12 V
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels1
Number of Elements1
Power Dissipation1.5 W
Resistance13 mΩ
Rise Time15 ns
Threshold Voltage1 V
Turn-Off Delay Time150 ns
Turn-On Delay Time20 ns
Dimensions
Height1.55 mm
Length5 mm
Width4 mm