가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | SI4434DY-T1-GE3CT-ND | 2,126 | 1 | Cut Tape | ||||||||
| TTI Asia | SI4434DY-T1-GE3 | 문의하기 | 23h | |||||||||
| Win Source | WS-SI4434DY-T1-GE3 | 3,520 | 30 | 20h | ||||||||
| Esaler Electronic | SI4434DY-T1-GE3 | 1 | 1d | |||||||||
| UnikeyIC | SI4434DY-T1-GE3 | 2,126 | 4 | Tape & Reel | 2h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-12-10
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-12-21
LTD Date2025-06-21
관련 부품
VishaySI7190DP-T1-GE3
Trans MOSFET N-CH 250V 18.4A 8-Pin PowerPAK SO T/R / MOSFET N-CH 250V 18.4A PPAK SO-8
설명
유통업체에서 제공한 Vishay SI4434DY-T1-GE3에 대한 설명입니다.
Trans MOSFET N-CH 250V 2.1A 8-Pin SOIC N T/R
N-CH MOSFET SO-8 250V 15.5MOHM @ 10V- LEAD(PB) AND HALOGEN FREE
MOSFET 250V 155mOhm 3A SO-8
N-CHANNEL 250-V (D-S) MOSFET
N-Ch 250V 3A 3,1W 0,155R SO8
Power Field-Effect Transistor, 2.1A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
SOT669 250V 3A N-CH MOSFET
new, original packaged
SO-8 MOSFETs ROHS
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight186.993455 mg
Technical
Continuous Drain Current (ID)2.1 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance155 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation3.1 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingDigi-Reel®
Power Dissipation1.56 W
Rds On Max155 mΩ
Rise Time23 ns
Schedule B8541290080
Turn-Off Delay Time47 ns
Turn-On Delay Time16 ns
규정 준수
환경 분류
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
규정 준수 정책