가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | SI4058DY-T1-GE3 | 2,797 | 1 | Cut Tape | ||||||||
| Verical | SI4058DY-T1-GE3 | 2,500 | 2500 | |||||||||
| Arrow Electronics | SI4058DY-T1-GE3 | 2,500 | 2500 | |||||||||
| DigiKey | SI4058DY-T1-GE3CT-ND | 15,123 | 1 | Cut Tape | ||||||||
| TTI | SI4058DY-T1-GE3 | 5,000 | 2500 | Tape & Reel | 22h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2016-07-19
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay SI4058DY-T1-GE3에 대한 설명입니다.
Mosfet, N-Ch, 100V, 10.3A, Soic Rohs Compliant: Yes |Vishay SI4058DY-T1-GE3
场效应管, MOSFET, N沟道, 100V, 10.3A, SOIC;
5.6W(Tc) 20V 2.8V@ 250¦ÌA 18nC@ 10 V 1N 100V 26m¦¸@ 10A,10V 10.3A 690pF@50V SOIC-8 4.9mm*3.9mm*1.75mm
Small Signal Field-Effect Transistor, 10.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
제조업체 별칭
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기술 사양
Physical
Number of Terminals8
Technical
Continuous Drain Current (ID)10.3 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance26 mΩ
Drain to Source Voltage (Vdss)100 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation5.6 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5.6 W
Turn-Off Delay Time11 ns
Turn-On Delay Time8 ns
Dimensions
Height1.75 mm