관련 부품
InfineonBSL211SP L6327
MOSFET, P-CH, 20V, 4.7A, 6TSOP; Transistor Polarity:P Channel; Continuous Drain
InfineonBSL207SPL6327HTSA1
MOSFET P-CH 20V 6A TSOP-6 / P-Channel 20 V 6A (Ta) 2W (Ta) Surface Mount PG-TSOP6-6
VishaySIA921EDJ-T1-GE3
SIA921EDJ-T1-GE3 DUAL P-CHANNEL MOSFET TRANSISTOR, 4.5 A, 20 V, 6-PIN SC-70
설명
유통업체에서 제공한 Vishay SI3443CDV-T1-E3에 대한 설명입니다.
Single P-Channel 20 V 0.06 Ohms Surface Mount Power Mosfet - TSOP-6
Trans MOSFET P-CH 20V 5.97A 6-Pin TSOP T/R
2W(Ta),3.2W(Tc) 12V 1.5V@ 250¦ÌA 12.4nC@ 5V 1P 20V 60m¦¸@ 4.7A,4.5V 5.97A 610pF@10V TSOP 3.05mm*1.65mm*1.1mm
MOSFET 20V 4.7A 3.2W 60mohm @ 4.5V
Small Signal Field-Effect Transistor, 5.97A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA
P Channel Mosfet, Full Reel; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4.7A; On Resistance Rds(On):0.06Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V Rohs Compliant: No
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기술 사양
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Weight19.986414 mg
Technical
Continuous Drain Current (ID)5.97 A
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)-20 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance610 pF
Max Operating Temperature150 °C
Max Power Dissipation2 W
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs-600 mV
Number of Channels1
Number of Elements1
Power Dissipation2 W
Rds On Max60 mΩ
Resistance60 mΩ
Rise Time59 ns
Schedule B8541290080
Threshold Voltage-600 mV
Turn-Off Delay Time30 ns
Turn-On Delay Time27 ns
Dimensions
Height1 mm
Length3.05 mm
Width1.65 mm