공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-08-18
Lifecycle StatusNRND (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay SI2328DS-T1-E3에 대한 설명입니다.
Single N-Channel 100 V 0.25 Ohms Surface Mount Power Mosfet - SOT-23
SI2328DS-T1-E3 N-CHANNEL MOSFET TRANSISTOR, 1.15 A, 100 V, 3-PIN TO-236
100V 1.15A 250m´Î@10V1.5A 730mW 4V@250Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
N-Channel 100 V (D-S) MOSFET Small Signal Field-Effect Transistor, 1.15A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:1.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):250mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:730mW; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:1.15A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight1.437803 g
Technical
Continuous Drain Current (ID)1.15 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance250 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation730 mW
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs2 V
Number of Channels1
Number of Elements1
Power Dissipation730 mW
Rds On Max250 mΩ
Resistance250 mΩ
Rise Time11 ns
Schedule B8541210080
Threshold Voltage4 V
Turn-Off Delay Time9 ns
Turn-On Delay Time7 ns
Dimensions
Height1.12 mm
Length3.04 mm
Width1.4 mm