공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 days ago)
설명
유통업체에서 제공한 Vishay IRFU9024PBF에 대한 설명입니다.
Single P-Channel 60 V 0.28 Ohms Through Hole Power Mosfet - IPAK (TO-251)
Trans MOSFET P-CH 60V 8.8A 3-Pin(3+Tab) TO-251AA
Avnet Japan
60V 8.8A 42W 280m´Î@10V5.3A 4V@250Ã×A P Channel TO-251(I-PAK) MOSFETs ROHS
MOSFET, Single - P-Channel, -60V, -8.8A, 42W, TO-251
P-Ch 60V 8,8A 42W 0,28R TO251AA
POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
P channel ;VBRDSS -60 V; RDSon 280 mOh
Vishay, Field-effect transistorMosfet
PCHAN, TO-251AA, 60V IRFU9024PBF
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:8.8A; On Resistance Rds(On):0.28Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
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Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight329.988449 mg
Technical
Continuous Drain Current (ID)8.8 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance280 mΩ
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation2.5 W
Rds On Max280 mΩ
Resistance280 mΩ
Rise Time68 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time15 ns
Turn-On Delay Time13 ns
Dimensions
Height6.22 mm
Lead Length9.65 mm
Length6.73 mm
Width2.39 mm