공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-22
Lifecycle StatusProduction (Last Updated: 7 months ago)
관련 부품
설명
유통업체에서 제공한 Vishay IRFR9220PBF에 대한 설명입니다.
Single P-Channel 200 V 1.5 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, P, -200V, -3.6A, D-PAK; Transistor Polarity:P Channel; Continuous Drain Current Id:3.6A; Drain Source Voltage Vds:200V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:-3.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3°C/W; Package / Case:DPAK; Power Dissipation Pd:42W; Power Dissipation Pd:42W; Pulse Current Idm:14A; SMD Marking:IRFR9220; Termination Type:SMD; Voltage Vds:200V; Voltage Vds Typ:-200V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:-10V
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.6 A
Current14 A
Current Rating-3.6 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance1.5 Ω
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs-4 V
Number of Channels1
Number of Elements1
Rds On Max1.5 Ω
Recovery Time300 ns
Resistance1.5 Ω
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time7.3 ns
Turn-On Delay Time8.8 ns
Voltage200 V
Voltage Rating (DC)-200 V
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm