공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay IRFR9014PBF에 대한 설명입니다.
Single P-Channel 60 V 0.5 Ohms Surface Mount Power Mosfet - TO-252
Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET, P, -60V, -5.1A, D-PAK; Transistor Type:MOSFET; Transistor Polarity:P; Voltage, Vds Typ:-60V; Current, Id Cont:5.1A; Resistance, Rds On:0.5ohm; Voltage, Vgs Rds on Measurement:-10V; Voltage, Vgs th Typ:-4V; Case Style:DPAK; Termination Type:SMD; Alternate Case Style:D-PAK; Current, Idm Pulse:20A; External Depth:10.5mm; External Length / Height:2.55mm; Power Dissipation:25W; Power, Pd:25W; SMD Marking:IRFR9014; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Thermal Resistance, Junction to Case A:5°C/W; Transistors, No. of:1; Voltage, Vds Max:60V; Width, External:6.8mm
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)5.1 A
Current Rating-5.1 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance500 mΩ
Drain to Source Voltage (Vdss)-60 V
Element ConfigurationSingle
Fall Time31 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance270 pF
Max Operating Temperature150 °C
Max Power Dissipation25 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Rds On Max500 mΩ
Recovery Time160 ns
Resistance500 mΩ
Rise Time63 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time9.6 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-60 V
Dimensions
Height2.39 mm
Length6.73 mm