공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
설명
유통업체에서 제공한 Vishay IRFR224PBF에 대한 설명입니다.
Single N-Channel 250 V 1.1 Ohm 42 W Surface Mount Power Mosfet - TO-252-3
Power MOSFET Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N Channel Mosfet, 250V, 3.8A, D-Pak; Transistor Polarity:n Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:3.8A; On Resistance Rds(On):1.1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 3.8 / Drain-Source Voltage (Vds) V = 250 / ON Resistance (Rds(on)) Ohm = 1.1 / Gate-Source Voltage V = 20 / Fall Time ns = 12 / Rise Time ns = 13 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 7 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 42
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기술 사양
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance1.1 Ω
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max1.1 Ω
Recovery Time400 ns
Rise Time13 ns
Schedule B8541290080
TerminationSMD/SMT
Turn-Off Delay Time20 ns
Turn-On Delay Time7 ns
Dimensions
Height2.39 mm
Length6.73 mm
Width6.22 mm