가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| TME | IRFPF30PBF | 0 | 1 | 13h | ||||||||
| Future Electronics | IRFPF30PBF | 0 | 25 | Tube | ||||||||
| Avnet | IRFPF30PBF | 0 | 500 | 16h | ||||||||
| RS (Formerly Allied Electronics) | IRFPF30PBF | 0 | 2 | Bulk | 6h | |||||||
| TTI Asia | IRFPF30PBF | 문의하기 | 6h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW7N105K5
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTW23N80K5
N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in a TO-247 package
설명
유통업체에서 제공한 Vishay IRFPF30PBF에 대한 설명입니다.
Single N-Channel 900 V 3.7 Ohms Flange Mount Power Mosfet - TO-247AC
IRFPF30PBF N-CHANNEL MOSFET TRANSISTOR, 3.6 A, 900 V, 3-PIN TO-247AC
POWER MOSFET Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)3.6 A
Drain to Source Resistance3.7 Ω
Drain to Source Voltage (Vdss)900 V
Element ConfigurationSingle
Fall Time30 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.2 nF
Max Operating Temperature150 °C
Max Power Dissipation125 W
Min Breakdown Voltage900 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation125 W
Rds On Max3.7 Ω
Resistance3.7 Ω
Rise Time25 ns
Turn-Off Delay Time90 ns
Turn-On Delay Time14 ns
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm