공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-18
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2024-11-04
LTD Date2025-05-04
관련 부품
STMicroelectronicsSTW19NM60N
Automotive-grade N-channel 600 V, 0.26 Ohm, 13 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW18N60M2
N-channel 600 V, 0.255 Ohm typ., 13 A MDmesh M2 Power MOSFET in TO-247 package
설명
유통업체에서 제공한 Vishay IRFP448PBF에 대한 설명입니다.
MOSFET, N-CH, 500V, 11A, TO-247; Available until stocks are exhausted Alternative available
Single-Gate MOSFET Transistors N-Chan 500V 11 Amp
Single N-Channel 500 V 11 A Power Mosfet - TO-247
Trans MOSFET N-CH 500V 11A 3-Pin(3+Tab) TO-247AC
N CHANNEL MOSFET, 500V, 11A, TO-247; Tra
Pwr MOSFET, 500V Single N-Ch. HEXFET; TO-247AC
Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:500V; Continuous Drain Current, Id:11A; On Resistance, Rds(on):600mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247AC ;RoHS Compliant: Yes
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)11 A
Current Rating11 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance600 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time32 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.9 nF
Max Operating Temperature150 °C
Max Power Dissipation180 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation180 W
Rds On Max600 mΩ
Resistance600 MΩ
Rise Time40 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time62 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)500 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm