공급망
Country of OriginIsrael
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
설명
유통업체에서 제공한 Vishay IRFP360PBF에 대한 설명입니다.
Single N-Channel 400 V 0.2 Ohms Flange Mount Power Mosfet - TO-247AC
Power Field-Effect Transistor, 23A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, 400V, 23A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:23A; Drain Source Voltage Vds:400V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:23A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.45°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:250W; Power Dissipation Pd:250W; Pulse Current Idm:92A; Termination Type:Through Hole; Voltage Vds Typ:400V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
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기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight38.000013 g
Technical
Continuous Drain Current (ID)23 A
Current Rating23 A
Drain to Source Breakdown Voltage400 V
Drain to Source Resistance200 mΩ
Drain to Source Voltage (Vdss)400 V
Element ConfigurationSingle
Fall Time67 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.5 nF
Max Operating Temperature150 °C
Max Power Dissipation280 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation280 W
Rds On Max200 mΩ
Recovery Time630 ns
Resistance200 mΩ
Rise Time79 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time100 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)400 V
Dimensions
Height20.7 mm
Length15.87 mm
Width5.31 mm