가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | IRFIBC20GPBF-ND | 1,041 | 1 | Tube | ||||||||
| TME | IRFIBC20GPBF | 0 | 500 | 6h | ||||||||
| TTI | IRFIBC20GPBF | 0 | 1K | Tube | 21h | |||||||
| Avnet | IRFIBC20GPBF | 0 | 1K | 21h | ||||||||
| TTI Europe | IRFIBC20GPBF | 0 | 1K | Tube | 22h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-07-16
Lifecycle StatusProduction (Last Updated: 4 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
관련 부품
STMicroelectronicsSTF2HNK60Z
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 Vishay IRFIBC20GPBF에 대한 설명입니다.
Single N-Channel 600 V 30 W 18 nC Silicon Through Hole Mosfet - TO-220-3
Trans MOSFET N-CH 600V 1.7A 3-Pin(3+Tab) TO-220FP
30W(Tc) 20V 4V@ 250¦ÌA 18nC@ 10 V 1N 600V 4.4¦¸@ 1A,10V 1.7A 350pF@25V TO-220-3
Power MOSFET Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, 600V, 1.7A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 4.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Power
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)1.7 A
Drain to Source Resistance4.4 Ω
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance350 pF
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation30 W
Rds On Max4.4 Ω
Rise Time23 ns
Threshold Voltage2 V
Turn-Off Delay Time30 ns
Turn-On Delay Time10 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm