데이터시트 및 문서
Vishay IRFI630GPBF에 대한 데이터시트 및 제조업체 설명서를 다운로드하세요.
공식 데이터시트1년 전
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 8 months ago)
설명
유통업체에서 제공한 Vishay IRFI630GPBF에 대한 설명입니다.
Single N-Channel 200 V 0.4 Ohms Flange Mount Power Mosfet - TO-220FP
Trans MOSFET N-CH 200V 5.9A 3-Pin(3+Tab) TO-220 Full-Pak
Avnet Japan
MOSFET, N, 200V, 5.9A, TO-220FP; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.9A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power
Power Field-Effect Transistor, 5.9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
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- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
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- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
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- VISH/IR
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- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
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기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)5.9 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance400 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance800 pF
Isolation Voltage2500 Vrms
Max Operating Temperature150 °C
Max Power Dissipation35 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation35 W
Rds On Max400 mΩ
Recovery Time340 ns
Resistance400 mΩ
Rise Time28 ns
Threshold Voltage4 V
Turn-Off Delay Time39 ns
Turn-On Delay Time9.4 ns
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm