가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Newark | IRFI620GPBF | 542 | 1 | |||||||||
| DigiKey | IRFI620GPBF-ND | 503 | 1 | Tube | ||||||||
| TME | IRFI620GPBF | 0 | 1 | 12h | ||||||||
| TTI | IRFI620GPBF | 0 | 1K | Tube | 1d | |||||||
| Future Electronics | IRFI620GPBF | 0 | 50 | Tube |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1993-09-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
설명
유통업체에서 제공한 Vishay IRFI620GPBF에 대한 설명입니다.
Single N-Channel 200 V 0.8 Ohms Flange Mount Power Mosfet - TO-220FP
Pwr MOSFET, 200V Single N-Ch. HEXFET; TO-220 FullPak (ISO)
Trans MOSFET N-CH 200V 4.1A 3-Pin(3+Tab) TO-220FP
POWER MOSFET Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor Polarity:n Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:4.1A; On Resistance Rds(On):0.8Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: No
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)4.1 A
Current Rating4.1 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance800 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance260 pF
Isolation Voltage2500 Vrms
Max Operating Temperature150 °C
Max Power Dissipation30 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation30 W
Rds On Max800 mΩ
Recovery Time300 ns
Resistance800 mΩ
Rise Time22 ns
Threshold Voltage4 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7.2 ns
Voltage Rating (DC)200 V
Dimensions
Height9.8 mm
Length10.63 mm
Width4.83 mm