공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2024-11-18
LTD Date2025-05-18
설명
유통업체에서 제공한 Vishay IRFD9220PBF에 대한 설명입니다.
Power MOSFET, P Channel, 200 V, 560 mA, 1.5 ohm, HVMDIP, Through Hole
MOSFET, POWER, P-CH, VDSS -200V, RDS(ON) 1.5 OHMS, ID -0.56A, HD-1,PD 1W, VGS +/-20V
POWER MOSFET Small Signal Field-Effect Transistor, 0.56A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
P Channel Mosfet, -200V, 560Ma Hd-1; Transistor Polarity:p Channel; Drain Source Voltage Vds:200V; Continuous Drain Current Id:560Ma; On Resistance Rds(On):1.5Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
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- Vishay General Semiconductor - Diodes Division
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기술 사양
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)560 mA
Current Rating-560 mA
Drain to Source Resistance1.5 Ω
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation1 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation1 W
Rds On Max1.5 Ω
Resistance1.5 Ω
Rise Time27 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time7.3 ns
Turn-On Delay Time8.8 ns
Voltage Rating (DC)-200 V
Dimensions
Height3.37 mm
Length6.29 mm
Width5 mm