공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusObsolete (Last Updated: 9 months ago)
설명
유통업체에서 제공한 Vishay IRFD9014에 대한 설명입니다.
Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.1A) | MOSFET P-CH 60V 1.1A 4-DIP
Ir# IRFD9014 Trans Mosfet P-ch 60V 1.1A 3HEXPDIP M Os
Power Field-Effect Transistor, 1.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:-1.1A; On Resistance, Rds(on):500mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:HD-1 ;RoHS Compliant: No
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- Vishay Techno
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageDIP
MountThrough Hole
Number of Pins4
Number of Terminals3
Technical
Continuous Drain Current (ID)1.1 A
Current Rating-1.1 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance500 mΩ
Fall Time63 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance270 pF
Max Operating Temperature175 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation1.3 W
Rds On Max500 mΩ
Rise Time63 ns
Turn-Off Delay Time10 ns
Turn-On Delay Time11 ns
Voltage Rating (DC)-60 V
Dimensions
Height3.37 mm
Length5 mm
Width6.29 mm