공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
InfineonIRF9Z34NPBF
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.1Ohm;ID -19A;TO-220AB;PD 68W;VGS +/-20V
설명
유통업체에서 제공한 Vishay IRF9Z30PBF에 대한 설명입니다.
Single P-Channel 50 V 0.14 Ohms Flange Mount Power Mosfet - TO-220AB
Trans MOSFET P-CH 50V 18A 3-Pin(3+Tab) TO-220AB
50V 18A 140m´Î@10V9.3A 74W 4V@250Ã×A P Channel TO-220(TO-220-3) MOSFETs ROHS
POWER MOSFET Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -50V, 18A, To-220Ab; Transistor Polarity:p Channel; Drain Source Voltage Vds:50V; Continuous Drain Current Id:18A; On Resistance Rds(On):0.093Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: No
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Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
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기술 사양
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight6.000006 g
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage-50 V
Drain to Source Resistance140 mΩ
Element ConfigurationSingle
Fall Time64 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance900 pF
Max Operating Temperature150 °C
Max Power Dissipation74 W
Min Breakdown Voltage50 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingBulk
Power Dissipation74 W
Rds On Max140 mΩ
Resistance140 mΩ
Rise Time110 ns
Schedule B8541290080
Threshold Voltage-4 V
Turn-Off Delay Time21 ns
Turn-On Delay Time12 ns
Dimensions
Height9.01 mm
Length10.41 mm
Width4.7 mm