공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-06-25
Lifecycle StatusProduction (Last Updated: 5 months ago)
LTB Date2008-06-30
LTD Date2008-09-30
설명
유통업체에서 제공한 Vishay IRF9Z24STRLPBF에 대한 설명입니다.
Trans MOSFET P-CH Si 60V 11A 3-Pin(2+Tab) D2PAK T/R
3.7W(Ta),60W(Tc) 20V 4V@ 250¦ÌA 19nC@ 10 V 1P 60V 280m¦¸@ 6.6A,10V 11A 570pF@25V TO-263
MOSFET P-CH 60V 11A D2PAK
Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET P-CHANNEL 60V
P-CH SINGLE -60V TO263
PCHAN IRF9Z24STRLPBF
제조업체 별칭
Vishay에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Vishay는 다음 이름으로도 알려져 있습니다:
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- Vishay Techno
- VISHAY FOIL RESISTORS
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
기술 사양
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight1.437803 g
Technical
Continuous Drain Current (ID)11 A
Drain to Source Breakdown Voltage-60 V
Drain to Source Resistance280 mΩ
Element ConfigurationSingle
Fall Time29 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance570 pF
Max Operating Temperature175 °C
Max Power Dissipation60 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape & Reel (TR)
Power Dissipation3.7 W
Rds On Max280 mΩ
Rise Time68 ns
Turn-Off Delay Time15 ns
Turn-On Delay Time13 ns
Dimensions
Height4.83 mm
Length10.67 mm
Width9.65 mm