Technical
Ambient Temperature Range High85 °C
Collector Emitter Breakdown Voltage32 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)32 V
Current Rating50 mA
Current Transfer Ratio5 %
Forward Current50 mA
Forward Voltage1.25 V
Input Current50 mA
Max Collector Current50 mA
Max Junction Temperature (Tj)100 °C
Max Operating Temperature85 °C
Max Output Current1 mA
Max Output Voltage32 V
Max Power Dissipation200 mW
Max Supply Voltage1.6 V
Min Operating Temperature-40 °C
Min Supply Voltage1.25 V
Number of Channels1
Number of Elements1
Output TypePhototransistor
Output Voltage32 V
Power Dissipation200 mW
Reverse Breakdown Voltage5 V
Reverse Voltage5 V
Reverse Voltage (DC)5 V
Schedule B8541406050
Sensing Distance300 µm
TerminationSolder
Voltage5 V
Voltage Rating (DC)32 V
Wavelength940 nm