Technical
Ambient Temperature Range High110 °C
Collector Emitter Breakdown Voltage32 V
Collector Emitter Saturation Voltage400 mV
Collector Emitter Voltage (VCEO)70 V
Current Transfer Ratio56 %
Dark Current100 nA
Fall Time15 µs
Forward Current60 mA
Forward Voltage1.5 V
Input Current60 mA
Isolation Voltage3750 Vrms
Max Collector Current100 mA
Max Input Current60 mA
Max Operating Temperature100 °C
Max Output Voltage80 kV
Max Power Dissipation150 mW
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Output Current per Channel100 mA
Output TypePhototransistor
Output Voltage70 V
Power Dissipation250 mW
Reverse Breakdown Voltage5 V
Reverse Voltage6 V
Rise Time4.6 µs
Schedule B8541408000
Turn-Off Delay Time25 µs
Turn-On Delay Time6 µs
Voltage Rating (DC)32 V