관련 부품
VishaySIHG70N60EF-GE3
Mosfet N-Ch 600V 70A To-247 Ef Series Rohs Compliant: Yes |Vishay SIHG70N60EF-GE3
VishaySIHW70N60EF-GE3
MOSFET N-CH 600V 70A TO247AD / N-Channel 600 V 70A (Tc) 520W (Tc) Through Hole TO-247AD
설명
유통업체에서 제공한 Toshiba TK62N60W,S1VF에 대한 설명입니다.
X35 Pb-F Power Mosfet Transistor To-247(Os) Moq=2000 Pd=400W F=1Mhz
Trans MOSFET N-CH Si 600V 61.8A 3-Pin(3+Tab) TO-247 Tube
Power Field-Effect Transistor, 61.8A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
400W(Tc) 30V 3.7V@3.1mA 180nC@ 10 V 1N 600V 40m¦¸@ 30.9A,10V 61.8A 6.5nF@300V TO-247 15.94mm*5.02mm*20.95mm
제조업체 별칭
Toshiba에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Toshiba는 다음 이름으로도 알려져 있습니다:
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
기술 사양
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)61.8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance40 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time15 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance6.5 nF
Max Operating Temperature150 °C
Max Power Dissipation400 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max40 mΩ
Rise Time58 ns
Turn-Off Delay Time310 ns