관련 부품
ROHMDTA143ZUBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA143ZUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
ROHMDTA043ZUBTL
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon
설명
유통업체에서 제공한 Toshiba RN2306,LF에 대한 설명입니다.
300mV@ 250¦ÌA,5mA PNP - Pre-Biased 100mW -5V 500nA -50V 50V 100mA SC-70 2mm*1.25mm*900¦Ìm
Trans GP BJT PNP 50V 0.1A 3-Pin USM Embossed T/R
Small Signal Bipolar Transistor
TRANS PREBIAS PNP 50V 0.1A SC70
제조업체 별칭
Toshiba에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Toshiba는 다음 이름으로도 알려져 있습니다:
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight28.009329 mg
Technical
Collector Base Voltage (VCBO)-50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current-100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)-5 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation100 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityPNP
Power Dissipation100 mW
Transition Frequency200 MHz
Dimensions
Height900 µm
Length2 mm
Width1.25 mm