가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | RN1305,LF | 100 | 100 | |||||||||
| DigiKey | RN1305LFCT-ND | 4,873 | 1 | Cut Tape | ||||||||
| Avnet | RN1305,LF | 0 | 3K | 2d | ||||||||
| Mouser | 757-RN1305LF | 1,290 | 1 | Tape & Reel | ||||||||
| Win Source | WS-RN1305,LF | 75,500 | 60 | 18h |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2019-08-29
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
ROHMDTC143ZUAT106
Bipolar Pre-Biased / Digital Transistor, Single NPN, 50 V, 100 mA, 4.7 kohm, 47 kohm
ROHMDTC123JUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ToshibaRN1308(TE85L,F)
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
ROHMDTC143TUAT106
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
설명
유통업체에서 제공한 Toshiba RN1305,LF에 대한 설명입니다.
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
Trans Digital BJT NPN 50V 100mA 100mW 3-Pin USM T/R
300mV@ 250¦ÌA,5mA NPN - Pre-Biased 100mW 5V 500nA 50V 50V 100mA SC-70 2mm*1.25mm*900¦Ìm
NPN - Pre-Biased 100mW 100mA 50V USM(SC-70-3) Digital Transistors ROHS
제조업체 별칭
Toshiba에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. Toshiba는 다음 이름으로도 알려져 있습니다:
- TOSH
- TOS
- Toshiba Semiconductor and Storage
- TOSHIB
- SMK
- TOSHIBA CORP
- TOSHI
- TSENG
- TOSHIBA CORPORATION
- Toshiba America Electronic Components
- TSH
- Toshiba Memory America Inc
- MARKTECH OPTOELECTRONICS
- TOSHIBA ELECTRONICS
- Toshiba Electronic Devices and Storage Corporation
- Toshiba America
- TOSHIBA ELECTRONIC COMPONENTS
- Toshiba Semiconductor
- Toshiba Lifestyle Products
- Toshiba America Electronic Components Inc
- TOSHIBA-PB FREE
- TOSHIBA SEMI
- TOSHIBAPb
- TOBHIBA
- TOSHBA
기술 사양
Physical
Case/PackageSC
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight28.009329 mg
Technical
Collector Base Voltage (VCBO)50 V
Collector Emitter Breakdown Voltage50 V
Collector Emitter Saturation Voltage300 mV
Collector Emitter Voltage (VCEO)50 V
Continuous Collector Current100 mA
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
hFE Min80
Max Breakdown Voltage50 V
Max Collector Current100 mA
Max Operating Temperature150 °C
Max Power Dissipation100 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingTape & Reel (TR)
PolarityNPN
Power Dissipation100 mW
Schedule B8541210080
Transition Frequency250 MHz
Dimensions
Height900 µm
Length2 mm
Width1.25 mm