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Texas Instruments CSD23382F4T의 평가 키트와 참조 설계를 확인하세요.
평가 키트
설명
유통업체에서 제공한 Texas Instruments CSD23382F4T에 대한 설명입니다.
-12-V, P channel NexFET™ power MOSFET, single LGA 0.6 mm x 1 mm, 76 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
MOSFET, P-CHANNEL, -12V, -3.5A, LGA-3; Polarité transistor: Canal P; Courant de drain Id: -3.5A; Tension Vds max..: -12V; Résistance Rds(on): 0.066ohm; Tension, mesure Rds: -4.5V; Tension de seuil Vgs: -800mV; Dissipation de p
MOSFET, P-CHANNEL, -12V, -3.5A, LGA-3; Transistor Polarity:P Channel; Continuous Drain Current Id:-3.5A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):0.066ohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs:-800mV; Power Dissipation Pd:500mW; Transistor Case Style:LGA; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)
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기술 사양
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins3
Technical
Continuous Drain Current (ID)-3.5 A
Drain to Source Voltage (Vds)-12 V
Element ConfigurationSingle
Fall Time41 ns
Gate to Source Voltage (Vgs)-800 mV
Input Capacitance235 pF
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingTape & Reel (TR)
Rds On Max76 mΩ
Rise Time25 ns
Schedule B8541290080
Threshold Voltage-800 mV
Turn-Off Delay Time66 ns
Turn-On Delay Time28 ns
Dimensions
Height350 µm
Length1.035 mm
Width635 µm