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Texas Instruments CSD13385F5T의 평가 키트와 참조 설계를 확인하세요.
평가 키트
설명
유통업체에서 제공한 Texas Instruments CSD13385F5T에 대한 설명입니다.
12-V, N channel NexFET™ power MOSFET, single LGA 0.8 mm x 1.5 mm, 19 mOhm, gate ESD protection 3-PICOSTAR -55 to 150
500mW(Ta) 8V 1.2V@ 250µA 5nC@ 4.5 V 1individualNChannel 12V 19mΩ@ 900mA,4.5V 4.3A 674pF@6V PICOSTAR-3 SMD mount 1.53mm*770μm*350μm
MOSFET, N-CH, 12V, 7.1A, PICOSTAR; Polarité transistor: Canal N; Courant de drain Id: 7.1A; Tension Vds max..: 12V; Résistance Rds(on): 0.015ohm; Tension, mesure Rds: 4.5V; Tension de seuil Vgs: 800mV; Dissipation de puissance
Mosfet, N-Ch, 12V, 7.1A, Picostar; Transistor Polarity:N Channel; Continuous Drain Current Id:7.1A; Drain Source Voltage Vds:12V; On Resistance Rds(On):0.015Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:800Mv; Power Rohs Compliant: Yes |TEXAS INSTRUMENTS CSD13385F5T
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기술 사양
Physical
Number of Pins3
Technical
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vds)12 V
Element ConfigurationSingle
Schedule B8541290080
Dimensions
Height350 µm
Length1.49 mm
Thickness338 µm
Width730 µm