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Texas Instruments CSD13302WT의 평가 키트와 참조 설계를 확인하세요.
평가 키트
관련 부품
VishaySI1427EDH-T1-GE3
MOSFET, P CH, W/ESD, 20V, 2A, SOT363; Transistor Polarity:P Channel; Continuous
Diodes Inc.DMN2300UFB-7B
Single N-Channel 20 V 360 mOhm 0.89 nC 1.2 W Silicon SMT Mosfet - UFDFN-3
설명
유통업체에서 제공한 Texas Instruments CSD13302WT에 대한 설명입니다.
12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 17.1 mOhm 4-DSBGA -55 to 150
Trans MOSFET N-CH 12V 1.6A 4-Pin DSBGA T/R
MOSFET 1.8W(Ta) 10V 1.3V@250µA 7.8nC@4.5V 1 N-Ch 12V 17.1mΩ@1A,4.5V 1.6A 862pF@6V DSBGA-4 SMD 1mm × 1mm × 620μm
CSD13302W 12V, N CHANNEL NEXFET
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- TEXAS INSTRUMENT
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- TEXAS INS
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- TEX
- Texas Instruments (TI)
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- TEXAS INSTRUMENTS INCORPORATED
- TEXINS
- TEXAS INTRUMENTS
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- TI Texas Instruments
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- TI-ROHS
- Texas Instr.
- Texas Instruments Inc.
기술 사양
Physical
Contact PlatingCopper, Silver, Tin
MountSurface Mount
Number of Pins4
Technical
Continuous Drain Current (ID)1.6 A
Drain to Source Resistance17.1 mΩ
Drain to Source Voltage (Vds)12 V
Element ConfigurationSingle
Fall Time7 ns
Gate to Source Voltage (Vgs)10 V
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Rise Time7 ns
Turn-Off Delay Time17 ns
Turn-On Delay Time6 ns
Dimensions
Height625 µm
Length0 m
Thickness650 µm
Width0 m