설명
유통업체에서 제공한 STMicroelectronics STW8NK80Z에 대한 설명입니다.
N-channel 800 V, 1.3 Ohm, 6.2 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
STW8NK80Z N-CHANNEL MOSFET TRANSISTOR, 6.2 A, 800 V, 3-PIN TO-247
Trans MOSFET N-CH 800V 6.2A 3-Pin(3+Tab) TO-247 Tube
Power MOSFET Transistors N-Ch 800 Volt 6.2A
STMicroelectronics NMOS MDmesh, SuperMESH, Vds=800 V, 6.2 A, TO-247, , 3
Power MOSFETs, 800V, 6.2A, TO-247, Tube
STMicroelectronics SCT
PTD HIGH VOLTAGE ROHS COMPLIANT: YES
STMICROELECTRONICS STW8NK80Z MOSFETS
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.5ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipatio
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- ST MICRO
- STM
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- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
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- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)6.2 A
Current Rating6.2 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time28 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.32 nF
Max Operating Temperature150 °C
Max Power Dissipation140 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation140 W
Rds On Max1.5 Ω
Rise Time30 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time48 ns
Turn-On Delay Time17 ns
Voltage Rating (DC)800 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm