공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTW42N65M5
N-channel 650 V, 0.070 Ohm typ., 33 A MDmesh M5 Power MOSFET in TO-247 package
STMicroelectronicsSTW43NM60ND
N-channel 600 V, 0.075 Ohm, 35 A, TO-247 FDmesh(TM) Power MOSFET (with fast diode)
설명
유통업체에서 제공한 STMicroelectronics STW45NM60에 대한 설명입니다.
Mosfet Transistor, N Channel, 45 A, 650 V, 110 Mohm, 10 V, 4 V |Stmicroelectronics STW45NM60
STW45NM60 N-CHANNEL MOSFET TRANSISTOR, 45 A, 600 V, 3-PIN TO-247
Power Field-Effect Transistor, 45A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
MOSFET, N, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 45A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.11ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation P
The MDmesh(TM) is a new revolutionary MOSFETtechnology that associates the Multiple Drain process with the Company's PowerMESH(TM) horizon-tal layout. The resulting product has an outstanding low on-resistance, impressively highdv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip tech-nique yields overall dynamic performance that is significantly better than that of similar competi-tion's products.
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)45 A
Current Rating45 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance110 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time23 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.8 nF
Max Operating Temperature150 °C
Max Power Dissipation417 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation417 W
Rds On Max110 mΩ
Resistance110 mΩ
Rise Time20 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-On Delay Time30 ns
Voltage Rating (DC)600 V
Dimensions
Height20.15 mm
Length15.75 mm
Width5.15 mm