공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2012-08-01
Lifecycle StatusEOL (Last Updated: 5 months ago)
LTB Date2026-09-10
LTD Date2027-03-10
관련 부품
STMicroelectronicsSTW33N60M2
N-channel 600 V, 0.108 Ohm typ., 26 A MDmesh M2 Power MOSFETs in TO-247 package
STMicroelectronicsSTW28NM50N
N-channel 500 V, 0.135 Ohm typ., 21 A MDmesh(TM) II Power MOSFET in TO-247 package
STMicroelectronicsSTW28N60M2
N-channel 600 V, 0.135 Ohm typ., 22 A MDmesh M2 Power MOSFETs in TO-247 package
InfineonIPW60R160P6FKSA1
Power MOSFET, N Channel, 600 V, 23.8 A, 160 mOhm, TO-247, 3 Pins, Through Hole
설명
유통업체에서 제공한 STMicroelectronics STW32NM50N에 대한 설명입니다.
N-channel 500 V, 0.1 Ohm typ., 22 A MDmesh(TM) II Power MOSFET in TO-247 package
N-Ch MOSFET 500V 22A 190W(Tc) 130mΩ@11A,10V 1.973nF@50V 62.5nC@10V 4V@250µA TO-247-3 TH
Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
MOSFET, N-CH, 500V, 22A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 22A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.1ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)22 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance130 mΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time23.6 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.973 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max130 mΩ
Rise Time9.5 ns
Schedule B8541290080
Turn-Off Delay Time110 ns