관련 부품
STMicroelectronicsSTW21NM60ND
MOSFET Transistor, N Channel, 17 A, 600 V, 0.17 ohm, 10 V, 4 V RoHS Compliant: Yes
STMicroelectronicsSTW20NM50FD
N-Channel 500V - 0.22Ohm - 20A - TO-247 FDmesh(TM) POWER MOSFET (with FAST DIODE)
STMicroelectronicsSTW22NM60N
N-channel 600 V, 0.2 Ohm, 16 A MDmesh(TM) II Power MOSFET in TO-247
설명
유통업체에서 제공한 STMicroelectronics STW20NM60에 대한 설명입니다.
N-Channel 600V - 0.25Ohm - 20A TO-247 MDmesh™ POWER MOSFET
N-Channel 600 V 0.29 Ohm Flange Mount MDmesh Power MosFet - TO-247
Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Transistor Polarity:n Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:20A; On Resistance Rds(On):0.25Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
제조업체 별칭
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- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight4.535924 g
Technical
Continuous Drain Current (ID)20 A
Current Rating20 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time11 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance1.5 nF
Max Operating Temperature150 °C
Max Power Dissipation214 W
Min Breakdown Voltage600 V
Min Operating Temperature-65 °C
Number of Elements1
Power Dissipation192 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time20 ns
Threshold Voltage4 V
Turn-Off Delay Time42 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)650 V
Dimensions
Height6.35 mm
Length50.8 mm
Width6.35 mm