공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 4 months ago)
관련 부품
STMicroelectronicsSTW12NK95Z
N-CHANNEL 950V - 0.72 Ohm - 10A - TO-247 Zener-Protected SuperMESH™ Power MOSFET
STMicroelectronicsSTW11NK90Z
STMicroelectronics N-Channel MDmesh SuperMESH MOSFET, Vds=900V, 9.2A, TO-247, TH, 3-Pin
STMicroelectronicsSTW12NK80Z
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-247 package
설명
유통업체에서 제공한 STMicroelectronics STW11NK100Z에 대한 설명입니다.
N-CHANNEL 1000V - 1.1 Ohm - 8.3A TO-247 Zener-Protected SuperMESH™ PowerMOSFET
STW11NK100Z N-CHANNEL MOSFET TRANSISTOR, 8.3 A, 1000 V, 3-PIN TO-247
Power MOSFET, N Channel, 1 kV, 8.3 A, 1.38 Ohm, TO-247, 3 Pins, Through Hole
Power Field-Effect Transistor, 8.3A I(D), 1000V, 1.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=1000 V, 8.3 A, TO-247encapsulation, Through hole mounting, 3Pin
Channel Type:N Channel; Drain Source Voltage Vds:1kV; Continuous Drain Current Id:8.3A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V; Power Dissipation:230W; No. of Pins:3Pins RoHS Compliant: Yes
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-247
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight9.071847 g
Technical
Continuous Drain Current (ID)8.3 A
Current Rating8.3 A
Drain to Source Breakdown Voltage1 kV
Drain to Source Resistance1.38 Ω
Drain to Source Voltage (Vdss)1 kV
Element ConfigurationSingle
Fall Time55 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.5 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation230 W
Min Breakdown Voltage1 kV
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation230 W
Rds On Max1.38 Ω
Resistance1.38 Ω
Rise Time18 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time98 ns
Turn-On Delay Time27 ns
Voltage Rating (DC)1 kV
Dimensions
Height24.45 mm
Length15.75 mm
Width5.15 mm