설명
유통업체에서 제공한 STMicroelectronics STU4N62K3에 대한 설명입니다.
N-channel 620 V, 1.7 Ohm typ., 3.8 A, SuperMESH3(TM) Power MOSFET in IPAK package
Power MOSFET, N Channel, 620 V, 3.8 A, 1.7 ohm, TO-251, Through Hole
Trans MOSFET N-CH 620V 3.8A 3-Pin(3+Tab) IPAK Tube
MOSFET N-Ch 620V 1.7 Ohm 3.8A SuperMESH 3
Power Mosfet, N Channel, 3.8 A, 620 V, 1.7 Ohm, 10 V, 3.75 V Rohs Compliant: Yes |Stmicroelectronics STU4N62K3
620 V, 3.8 A, 1.8 OHM, IPAK SUPERMESH3 N-CHANNEL POWER MOSFET Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
MOSFET, N CH, 620V, 3.8A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.8A; Drain Source Voltage Vds: 620V; On Resistance Rds(on): 1.7ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Pow
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- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-251
Contact PlatingTin
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3.8 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance1.95 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time19 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance550 pF
Max Operating Temperature150 °C
Max Power Dissipation70 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max2 Ω
Rise Time9 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time29 ns
Turn-On Delay Time10 ns
Dimensions
Height6.9 mm
Length6.6 mm
Width2.4 mm