공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2014-12-18
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2026-10-03
LTD Date2027-04-03
관련 부품
InfineonIRF7424TRPBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
InfineonIRF7424PBF
MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 13.5 Milliohms;ID -11A;SO-8;PD 2.5W;gFS 17S
InfineonIRF7240TRPBF
MOSFET, Power;P-Ch;VDSS -40V;RDS(ON) 0.015Ohm;ID -10.5A;SO-8;PD 2.5W;VGS +/-20V
설명
유통업체에서 제공한 STMicroelectronics STS10P4LLF6에 대한 설명입니다.
P-channel 40 V, 0.0125 Ohm typ., 10 A STripFET F6 Power MOSFET in a SO-8 package
STS10P4LLF6 P-CHANNEL MOSFET TRANSISTOR, 10 A, 40 V, 8-PIN SOIC
P-Channel 40 V 10 A 15 mOhm Surface Mount STripFET F6 Power Mosfet - SOIC-8
MOSFET, P-CH, -40V, -10A, 2.7W, SOIC; Transistor Polarity: P Channel; Continuous Drain Current Id: -10A; Drain Source Voltage Vds: -40V; On Resistance Rds(on): 0.0125ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 2.7W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: StripFET F6 Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (15-Jan-2019)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)10 A
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.525 nF
Max Operating Temperature150 °C
Max Power Dissipation2.7 W
Min Breakdown Voltage40 V
Number of Elements1
Power Dissipation2.7 W
Rds On Max15 mΩ
Turn-Off Delay Time170 ns
Turn-On Delay Time49.4 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm