가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | STP8NM60 | 0 | 1K | 17h | ||||||||
| Microchip USA | STP8NM60 | 2,914 | 3K | Tray | 6d | |||||||
| Win Source | WS-STP8NM60 | 20 | 80 | 15h | ||||||||
| Worldway Electronics | STP8NM60 | 28,187 | 7 | Tube | 14h | |||||||
| Esaler Electronic | STP8NM60 | 1,000 | 1d |
공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
설명
유통업체에서 제공한 STMicroelectronics STP8NM60에 대한 설명입니다.
Trans MOSFET N-CH 600V 8A 3-Pin(3+Tab) TO-220 Tube
Power Field-Effect Transistor, 8A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 600V, 8A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:8A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:30V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP8NM60
MOSFET N CH 650V 8A TO-220; Transistor Polarity:N Channel; On State Resistance:900mohm; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; Case Style:TO-220; Cont Current Id:2.5A; Termination Type:Through Hole; Transistor Type:Power MOSFET; Typ Voltage Vds:600V; Typ Voltage Vgs th:4V; Voltage Vgs Rds on Measurement:10V
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)8 A
Current Rating8 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance1 Ω
Element ConfigurationSingle
Fall Time10 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation100 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation100 W
Rds On Max1 Ω
Rise Time10 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)650 V