공급망
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-10-27
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2015-01-31
LTD Date2015-07-31
설명
유통업체에서 제공한 STMicroelectronics STP7NM60N에 대한 설명입니다.
N-channel 600 V, 5 A, 0.84 Ohm MDmesh(TM) II Power MOSFET in TO-220 package
Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220AB Tube
MOSFET N-Channel 600V 5A TO220
Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CH, 600V, 5A, TO 220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.84ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:45W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5 A
Drain to Source Breakdown Voltage600 V
Drain to Source Resistance900 mΩ
Drain to Source Voltage (Vdss)600 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance363 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max900 mΩ
Resistance900 mΩ
Rise Time10 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time26 ns
Turn-On Delay Time7 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm