설명
유통업체에서 제공한 STMicroelectronics STP4NK50ZD에 대한 설명입니다.
N-CHANNEL 500V 2.4 Ohm 3A TO-220 SUPERFREDMESH MOSFET
STP4NK50ZD N-CHANNEL MOSFET TRANSISTOR, 3 A, 500 V, 3-PIN TO-220
N-channel 500 V, 2.4 Ohm typ., 3 A SuperMESH Power MOSFET in TO-220 package
Ciiva
Trans MOSFET N-CH 500V 3A 3-Pin(3+Tab) TO-220AB Tube
500V 3A 45W 2.7´Î@10V1.5A 4.5V@50Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor type:MOSFET; Voltage, Vds typ:500V; Current, Id cont:3A; Resistance, Rds on:2.7ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:3.5V; Case style:TO-220 (SOT-78B); Capacitance, Ciss typ:3100pF; Current, Iar:3A; Current, Idm pulse:12A; Energy, avalanche single pulse Eas:120mJ; Power, Pd:45W; Resistance, Rds on @ Vgs = 10V:2.7ohm; Termination Type:Through Hole; Transistor polarity:N; Voltage, Rds measurement:10V; Voltage, Vds:500V; Voltage, Vds max:500V; Voltage, Vgs max:30V; Voltage, Vgs th max:4.5V; Voltage, Vgs th min:2.5V
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기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)3 A
Current Rating3 A
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance310 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage500 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max2.7 Ω
Rise Time15.5 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time9.5 ns
Voltage Rating (DC)500 V
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm