가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| DigiKey | 497-3187-5-ND | 349 | 1 | Tube | ||||||||
| TME | STP40NF03L | 0 | 1 | 7h | ||||||||
| Newark | STP40NF03L | 0 | 1 | |||||||||
| Avnet | STP40NF03L | 0 | 3K | 10h | ||||||||
| Future Electronics | STP40NF03L | 0 | 100 | Tube |
관련 부품
STMicroelectronicsSTP95N3LLH6
N-channel 30 V, 4.2 mOhm typ., 80 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
STMicroelectronicsSTP27N3LH5
N-channel 30 V, 0.014 Ohm, 27 A, TO-220 STripFET (TM) V Power MOSFET
설명
유통업체에서 제공한 STMicroelectronics STP40NF03L에 대한 설명입니다.
N-Channel 30V - 0.020 Ohm - 40A - TO-220 StripFET(TM) II MOSFET
N-Channel 30 V 0.022 Ohm Flange Mount STripFET Power MosFet TO-220
40 A 30 V 0.035 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 40A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 40A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation
Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:40A; Tensión Drenaje-Fuente Vds:30V; Resistencia De Activación Rds(On):22Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:1.7V |Stmicroelectronics STP40NF03L
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)40 A
Current Rating40 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance35 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time16 ns
Gate to Source Voltage (Vgs)16 V
Input Capacitance770 pF
Max Operating Temperature175 °C
Max Power Dissipation70 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation70 W
Rds On Max22 mΩ
Resistance22 mΩ
Rise Time80 ns
Threshold Voltage1.7 V
Turn-Off Delay Time25 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)30 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm