가격 및 재고
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | STP18NM60ND | 200 | 1K | Tube | ||||||||
| DigiKey | 497-13882-5-ND | 167 | 1 | Tube | ||||||||
| RS (Formerly Allied Electronics) | STP18NM60ND | 0 | 5 | Bulk | 8h | |||||||
| Avnet | STP18NM60ND | 0 | 1K | 4d | ||||||||
| Win Source | WS-STP18NM60ND | 19 | 17 | 7h |
관련 부품
STMicroelectronicsSTF18N65M5
N-channel 650 V, 0.198 Ohm typ., 15 A MDmesh M5 Power MOSFET in TO-220FP package
STMicroelectronicsSTF19NM50N
N-channel 500 V, 0.2 Ohm, 14 A MDmesh(TM) II Power MOSFET in TO-220FP
STMicroelectronicsSTF15N65M5
N-channel 650 V, 0.308 Ohm typ., 11 A MDmesh M5 Power MOSFET in TO-220FP package
설명
유통업체에서 제공한 STMicroelectronics STP18NM60ND에 대한 설명입니다.
N-Channel 650 V 0.29 Ohm 130 W Flange Mount Power Mosfet - TO-220-3
N-channel 600 V, 0.25 Ohm typ., 13 A FDmesh(TM) II Power MOSFET (with fast diode) in TO-220 package
STP18NM60ND N-CHANNEL MOSFET TRANSISTOR, 13 A, 600 V, 3-PIN TO-220
Trans MOSFET N-CH 600V 13A 3-Pin(3+Tab) TO-220AB Tube
Power Field-Effect Transistor, 13A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage650 V
Drain to Source Resistance290 mΩ
Drain to Source Voltage (Vdss)650 V
Element ConfigurationSingle
Fall Time18 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance1.03 nF
Max Operating Temperature150 °C
Max Power Dissipation130 W
Min Breakdown Voltage600 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation130 W
Rds On Max290 mΩ
Resistance290 mΩ
Rise Time15.5 ns
Turn-Off Delay Time13 ns
Turn-On Delay Time55 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm