공급망
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1980-01-04
Lifecycle StatusProduction (Last Updated: 1 month ago)
관련 부품
STMicroelectronicsSTP13NK60Z
N-Channel 600 V, 0.48 Ohm, 13 A TO-220 Zener-Protected SuperMesh(TM) POWER MOSFET
STMicroelectronicsSTP10NK80Z
N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-220 package
STMicroelectronicsSTP10NK70Z
N-CHANNEL 700 V - 0.75 OHM - 8.6 A TO-220 ZENER-PROTECTED SuperMESH POWER MOSFET
설명
유통업체에서 제공한 STMicroelectronics STP12NK80Z에 대한 설명입니다.
N-channel 800 V, 0.65 Ohm, 10.5 A Zener protected SuperMESH(TM) Power MOSFET in TO-220 package
Trans MOSFET N-CH 800V 10.5A 3-Pin(3+Tab) TO-220AB Tube
Power MOSFET, N Channel, 800 V, 10.5 A, 0.75 ohm, TO-220, Through Hole
MOSFET N-ch 10.5A 800V SuperMESH TO220
MOSFET 800V 750mOhm 10A TO220 RoHSconf
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 10.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.75ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipat
Power Field-Effect Transistor, 10.5A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube MDmesh, SuperMESHseries, Vds=800 V, 10.5 A, TO-220encapsulation, Through hole mounting, 3Pin
Mosfet, N, To-220; Transistor, Polaridad:Canal N; Intensidad Drenador Continua Id:10.5A; Tensión Drenaje-Fuente Vds:800V; Resistencia De Activación Rds(On):750Mohm; Tensión Vgs De Medición Rds(On):10V; Tensión Umbral Vgs:3.75V |Stmicroelectronics STP12NK80Z
제조업체 별칭
STMicroelectronics에는 유통업체가 대체하여 사용할 수 있는 전 세계 여러 브랜드가 있습니다. STMicroelectronics는 다음 이름으로도 알려져 있습니다:
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
기술 사양
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)10.5 A
Current Rating10.5 A
Drain to Source Breakdown Voltage800 V
Drain to Source Resistance750 mΩ
Drain to Source Voltage (Vdss)800 V
Element ConfigurationSingle
Fall Time20 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.62 nF
Max Operating Temperature150 °C
Max Power Dissipation190 W
Min Breakdown Voltage800 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation190 W
Rds On Max750 mΩ
Resistance750 mΩ
Rise Time18 ns
Threshold Voltage3.75 V
Turn-Off Delay Time70 ns
Turn-On Delay Time30 ns
Voltage Rating (DC)800 V
Dimensions
Height9.15 mm
Length10.4 mm
Width4.6 mm